dielectric isolation
英 [ˌdaɪɪˈlektrɪk ˌaɪsəˈleɪʃn]
美 [ˌdaɪɪˈlektrɪk ˌaɪsəˈleɪʃn]
介质隔离
双语例句
- The high performance of this product is a result of the Intersil Dielectric Isolation process.
该产品是一种高性能的Intersil的介质隔离过程的结果。 - It has been designed and constructed with the Intersil High Frequency Bipolar Dielectric Isolation process and features dynamic parameters never before available from a truly differential device.
这已被设计与Intersil的高频双极电介质隔离工艺构造和特点，从一个以前从未真正差速器可用的动态参数。 - The Research for silicon Anisotropic Etching And Its Application to dielectric isolation with SDB
硅的各向异性腐蚀及其在SDB介质隔离技术中的应用 - The dielectric isolation breakdown voltage can be adjusted according to the requirement of circuits, and it can be estimated from oxide thickness.
其介质隔离击穿电压可以根据电路的需要进行调整，并可根据氧化层厚度进行预测。 - A Compatible Technology of SOI Full Dielectric Isolation with Complementary Bipolar Process
SOI全介质隔离与高频互补双极兼容工艺 - On the other hand, SOI ( Silicon-on-Insulator) is becoming mainstream technology in sub-micron semiconductor technology due to its completely dielectric isolation and ideal sub-threshold slope, as well as low power-consumption.
另一方面，由于SOI（Silicon-on-Insulator）技术具有更好的隔离性能、理想的亚阈值特性和较低的功率消耗等特点，日益成为半导体行业发展的主流技术。 - It also gave an application to SDB dielectric isolation with SDB.
最后指出了该工艺在SDB介质隔离岛形成中的一个应用。 - The measurement of dielectric loss and volume resistivity is effective preventive tests to judge insulating oil isolation status of polluted and aging, and it's important method of ensuring the safe operation of transformer and oil-filled circuit breaker, etc.
绝缘油的介质损耗因数、体积电阻率测量，是判断绝缘油的劣化与污染程度的有效预防性试验，是保障变压器、油断路器等充油电力设备安全运行的重要手段。 - In this paper, the research of the dielectric isolation of over-20 μ m-film SOI is concentrated on the structure, technology and experiment.
论文对硅膜厚度大于20μm的SOI介质隔离问题从结构、工艺和实验三个方面进行了深入研究。 - A monolithic high speed wide band voltage feedback operational amplifier is developed using dielectric isolation complementary bipolar process.
介绍了一种采用介质隔离互补双极工艺制造的单片高速宽带电压反馈型运算放大器。 - A silicon wafer bonding technology and its application to new dielectric isolation combined with conventional V-shaped grooves are described.
本文介绍了将我们开发的硅片粘合技术与传统V形槽隔离工艺相结合而研制成功的一种新的介质隔离方法。 - Experimental results indicate that, with the new procedure, breakdown-voltage above 800 V can be achieved for dielectric isolation structure on 20-μ m SOI layer.
实验结果表明，在膜厚为20μm的SOI上，可以实现击穿电压800V以上的介质隔离结构。 - A high-isolation MEMS switch at S-band with high ε dielectric layer and dual inductor-tuned bridge membrane are designed to increase the switch isolation.
通过双膜桥结构、选择高介电常数的介质膜、微电感结构膜桥这些措施，达到提高开关隔离度的目的。 - Because the isolation effect among n-type drift region, p-type SOI layer, discontinuous n-islands is very good, there is no need to use deep trench dielectric isolation in the power Integrated Circuits.
n型漂移区、p型SOl层、不连续N岛之间有很好的自隔离效果，省去了在功率集成电路中做深槽介质隔离。